The HMC1126 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 2 GHz to 50 GHz. The HMC1126 provides 11 dB of gain, 28 dBm output IP3, and 17.5 dBm of output power at 1 dB gain compression, while requiring 65 mA from a 5 V supply.

The HMC1126 amplifier inputs/outputs are internally matched to 50 facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

APPLICATIONS

• Output power for 1 dB compression (P1dB): 17.5 dB typical
• Saturated output power (PSAT): 21 dBm typical
• Gain: 11 dB typical

• Output third-order intercept (IP3): 28 dBm typical
• Supply voltage: 5 V at 65 mA
• 50 matched input/output
• Die size: 2.3 mm × 1.45 mm × 0.05 mm

HMC1126，封装：CHIPS OR DIE，包装形式及数量：托盘，25，工作温度：-55 to 85C，AD官网报价：130.9（100-499个）；113.3（1000+个）

HMC1126-SX，封装：CHIPS OR DIE，包装形式及数量：托盘，2，工作温度：-55 to 85C，AD官网报价：252.51（100-499个）；252.51（1000+个）